PULSED FIELD GEL ELECTROPHORETIC STUDY OF THE REPAIR OF X-RAY-INDUCED DNA DOUBLE-STRAND BREAKS IN YEAST
PULSED FIELD GEL ELECTROPHORETIC STUDY OF THE REPAIR OF X-RAY-INDUCED DNA DOUBLE-STRAND BREAKS IN YEAST
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Date
1997-11
Authors
Abdullahi, Anderson Kassimu
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Abstract
Diploid yeast cells Rad 54-3 of strain Saccharomyces
Cerevisiae were prepared for survival assay, double-strand
break (DSB), repair and budding delay analysis after
irradiation with various doses of X rays.
The survival results provide indirect evidence for
the repair of DNA DSB at the permissive temperature 23°C
and inability to do so at the restrictive temperature
36°C.
Using the Clamped Homogeneous Electric Field (CHEF)
electrophoresis method, the DNA DSB induction frequency
was found to be (7.43 ± 0.34) x 10-12 (g/mol)-1 Gy-1. Repair
investigation using same method appear to show the
occurrence of secondary DSBs and also provided direct
evidence for the repair of DSB at 23°C post-irradiation
incubation in growth medium and inability to repair the
lesions at 36 °C. The secondary DSBs could be due to
enzymatic incisions at the damage sites enhanced by
incubation in growth medium while the monophasic repair,
found to lack the fast repair component, could be due to
the relatively low dose used (maximum of 82 Gy).
A parallel experiment to the repair investigation -
budding delay analysis - showed that budding delay is
dependent on irradiation dose and incubation temperature
Description
A thesis submitted to the Postgraduate School, Ahmadu
Bello University, Zaria, in partial fulfillment of the
requirements for the award of the degree of Master of
Science in Radiation Biophysics.
November, 1997
Keywords
PULSED,, FIELD., GEL,, ELECTROPHORETIC,, REPAIR,, X-RAY-INDUCED,, DNA,, DOUBLE-STRAND,, BREAKS,, YEAST.