ENERGY DENSITY FUNCTIONAL THEORY IN DOPED SEMICONDUCTORS
ENERGY DENSITY FUNCTIONAL THEORY IN DOPED SEMICONDUCTORS
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Date
1986-06
Authors
Amali, Adah Ijachi
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Abstract
The Thomas-Ferni (TF) method and i t s r e f i n e m e n t , the
Thomas-Fermi -Di r a c (TFD) approach have been w i d e l y employed
i n the l i t e r a t u r e to study screening i n both metals and semii
conductors, but only for homogeneous and isotropic model
solids (i.e. within the Local density approximation). The
frontier of s t a t i c d i e l e c t r i c screening theory in semiconductors
is here extended further to account for exchange-correlation
and inhomogeneity within the framework of the energy density
functional formalism. In particular, the reciprocal space
formulation of Langreth and Mehl is used to give exchangecorrelation
a nonlocal description. The resulting nonlocal
TFD equation is linearized to obtain a closed analytical
expression for the spatial dielectric function and the range
of validity is investigated. It is shown that the spatial
d i e l e c t r i c function s t i l l has a simple analytical form but
the constants appearing in it have many body effects
incorporated. The present nonlocal Thomas-Fermi-Di rac
theory (TFD-NLDA) is more effective at reducing a t t r a c t i ve
potentials than all previous linear or nonlinear screening
theories based on the TF method.
Description
A thesis submitted to the post-graduate school,
Ahmadu Bello University, in partial fulfillment of
the requirements for the degree of Master of Science.
DEPARTMENT OF PHYSICS,
FACULTY OF SCIENCE,
AHMADU BELLO UNIVERSITY,
ZARIA - NIGERIA.
Keywords
ENERGY DENSITY,, DOPED SEMICONDUCTORS,