TIGHT BINDING CALCULATIONS FOR THF ENERGY BANDS OF CRYSTALS WITH DIAMOND-LIKE STRUCTURE

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dc.contributor.authorUMAR, SADIQ
dc.date.accessioned2014-02-06T11:02:33Z
dc.date.available2014-02-06T11:02:33Z
dc.date.issued1990-11
dc.descriptionA Thesis submitted to the Postgraduate School Ahmadu Bello university, Zaria, in partial fulfilment of the requirements for the Award of the Degree of Master of Science in Physics.en_US
dc.description.abstractThe tight binding method was used to calculate the valence band structures of carbon, silicon and Germanium. only the nearest neighbour interactions were considered on the assumption that the two centre integrals would get smaller as the atoms get further apart. A general discussion of the method is given including the detailed calculations of the matrix elements. In obtaining the numerical values of the energies corresponding to the different symmetry points, the values of the two centre integrals i.e the interaction of two orbitals on different atomic sites were taken from the value obtained by Chadi and Cohen (1975). The top of the valence band at. T was considered to have zero energy, so all other energies were measured relative to the top of the valence band.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/443
dc.language.isoenen_US
dc.subjectTIGHTen_US
dc.subjectBINDINGen_US
dc.subjectCALCULATIONSen_US
dc.subjectENERGYen_US
dc.subjectBANDSen_US
dc.subjectCRYSTALSen_US
dc.subjectDIAMOND-LIKEen_US
dc.subjectSTRUCTUREen_US
dc.titleTIGHT BINDING CALCULATIONS FOR THF ENERGY BANDS OF CRYSTALS WITH DIAMOND-LIKE STRUCTUREen_US
dc.typeThesisen_US
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